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The GaNology Lab in SIST will focus on developing advanced technologies in GaN device characterization, analysis, and their applications in power electronics, light emitters, photo detectors, and etc.  

The lab has equipped with two probe stations and several powerful device analyzers including semiconductor analyzers, deep level transient spectrum (DLTS), and so on. 

A list of publication (full-text included, please click the links):

1. Xu Zhang*, Xinbo Zou*#, Xing Lu, Chak Wah Tang, and Kei May Lau#, “Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison”, IEEE Transactions on Electron Devices, Vol. 64, No. 3, pp.809-815, 2017. DOI: 10.1109/TED.2017.2647990 #Corresponding Author

2. Yuefei Cai, Xinbo Zou, Yuan Gao; Lisong Li; Philip K. T. Mok; Kei May Lau, “Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-free Driver”, accepted by IEEE Photonics Technology Letter; doi: 10.1109/LPT.2017.2742861.

3. Pak San Yip, Xinbo Zou#, Wai Ching Cho, Kam Lam Wu and Kei May Lau# “Transistors and Tunnel Diodes Enabled by Large-Scale MoS2 Nanosheets Grown on GaN”, Semiconductor Science and Technology, Vol.32, No. 7, 2017, 2017, DOI: 10.1088/1361-6641/aa7247, #Corresponding Author

4. Xu Zhang, Xinbo Zou, Chak Wah Tang, and Kei May Lau, “Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si”, Phys. Status Solidi A, 1600817. DOI:10.1002/pssa.201600817

5. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, “High Performance Monolithically Integrated GaN Driving VMOSFET on LED," IEEE Electron Device Letters, vol. 38, no. 6, pp. 752-755, 2017. DOI: 10.1109/LED.2017.2691908

6. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, “Breakdown Ruggedness of Quasi-vertical GaN-based p-i-n Diodes on Si substrates”, IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1158-1161, Sept. 2016. DOI: 10.1109/LED.2016.2594821.

7. Xinbo Zou, Xu Zhang, W. C. Chong, Chak Wah Tang, and Kei May Lau, “Vertical LEDs on Rigid and Flexible Substrates using GaN-on-Si Epilayers and Au-free Bonding”, IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1587-1593, April 2016. DOI: 10.1109/TED.2016.2526685.

8. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, “Fully-vertical GaN p-i-n Diodes using GaN-on-Si Epilayers”, IEEE Electron Device Letters, vol. 37, No. 5, pp. 636-639, May, 2016. DOI: 10.1109/LED.2016.2548488.

9. Xinbo Zou*, Yuefei Cai*, Wing Cheung Chong, and Kei May Lau, “Fabrication and Characterization of High Voltage LEDs using Photoresist-filled-trench Technique”, IEEE/OSA Journal of Display Technology, vol. 12, no. 4, pp. 397-401, April 2016; DOI: 10.1109/JDT.2015.2493368. *equal contribution

10. Yuefei Cai*, Xinbo Zou*, Wing Cheung Chong, and Kei May Lau, “Optimization of Electrode Structure for Flip Chip HVLED via Two-level Metallization”, Physica status solidi. A, Applications and materials science, Jan, 2016. DOI: 10.1002/pssa.201532803  *equal contribution.

11.Chao Liu, Yuefei Cai, Xinbo Zou, Kei May Lau, “Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode”, IEEE Photonics Technology Letters, Vol. 28, No. 10, 2016. DOI: 10.1109/LPT.2016.2532338.

12.Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, “Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate” Applied Physics Express, Volume 9, No. 3, 031001, 2016.

13.Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, “Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate annealing”, Semiconductor Science and Technology, Vol. 31, No. 5, 2016. DOI: 10.1088/0268-1242/31/5/055019

14.Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, “Monolithic Integration of GaN-based LED with E-mode Vertical Driving MOSFET”, Applied Physics Letters 109, 053504 (2016), DOI: 10.1063/1.4960105.

15.Bei Shi, Qiang Li, Yating Wan, Kar Wei Ng, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "InAlGaAs/InAlAs MQWs on Si Substrate," IEEE Photonics Technology Letters, Vol.27, No.7, pp.748-751, 2015. DOI: 10.1109/LPT.2015.2391099

16.Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau, "Growth and Characterization of Horizontal GaN Wires on Silicon", Applied Physics Letters, 104 (26), June 2014. DOI:10.1063/1.4886126

17.Xinbo Zou, Ka Ming Wong, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer". physica status solidi (c) 11 (3-4),730, 2014.DOI: 10.1002/pssc.201300506

18.Xinbo Zou, Ka Ming Wong, Xueliang Zhu, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates", IEEE Electron Device Letters, vol.34, no.7, pp.903, July 2013. DOI: 10.1109/LED.2013.2260126.

19.Jun Ma, Xueliang Zhu, Ka Ming Wong, Xinbo Zou, and Kei May Lau, "Improved GaN-based LED grown on Silicon (111) substrates using stress/dislocation-engineered interlayers", Journal of Crystal Growth, Vol.370, pp.265-268, 2013. DOI:10.1016/j.jcrysgro.2012.10.028

20. Xinbo Zou, Ka Ming Wong, Naisen Yu, Peng Chen, Kei May Lau, "Improved Crystalline Quality and Light Output Power of GaN-based LEDs Grown on Si by Buffer Optimization", Physica Status Solidi (c), Volume 9 Issue 3-4, pp. 572, Mar 2012. DOI: 10.1002/pssc.201100442

21. Kei May Lau, Ka Ming Wong, Xinbo Zou, and Peng Chen, "Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper", Optics Express, Vol. 19, Issue S4, pp. A956-A961, 2011. DOI: 10.1364/OE.19.00A956

22. Xinbo Zou, Hu Liang and Kei May Lau, "Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution", Physica Status Solidi (c), Vol. 7, No.7-8, pp. 2171, 2010. DOI: 10.1002/pssc.200983527

23. Ka Ming Wong, Xinbo Zou, Chen Peng, and Kei May Lau, "Transfer of GaN- based light-emitting diodes from silicon growth substrate to copper", IEEE Electron Device Letters, Vol. 31, No. 2, 2010. DOI: 10.1109/LED.2009.2037346

24.Dongmei Deng, Naisen Yu, Yong Wang, Xinbo Zou, Hao-chung Kuo, Peng Chen, and Kei May Lau, "InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates", Applied Physics Letters 96(20): 201106, 2010. DOI: 10.1063/1.3427438

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